Reducing the effective height of a Schottky barrier using low-energy ion implantation

Abstract

A thin highly doped layer at the surface of a semiconductor has been used to increase the surface field of a Schottky barrier and reduce the barrier height by an amount insensitive to applied bias. The effective barrier height of Ni–Si barriers of this type made using ion‐implantation techniques has been reduced by an amount in the range 0–0.2 eV without significant degradation of the reverse characteristic.