Thermal treatment studies of the photoluminescence intensity of porous silicon
- 25 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (22), 2814-2816
- https://doi.org/10.1063/1.105869
Abstract
Thermal annealing studies of the photoluminescence (PL) intensity and Fourier‐transform infrared spectroscopy have been performed concurrently on porous Si. A sharp reduction in the PL intensity is observed for annealing temperatures ≳300 °C and this coincides with desorption of hydrogen from the SiH2 surface species. A brief etch in HF can restore the luminescence of the samples annealed below 400 °C. We conclude that SiH2 is essential to the visible luminescence in porous Si.Keywords
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