Self-Diffusion in Tellurium. II. Grain Boundary and Dislocation Effects
- 15 March 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 155 (3), 603-611
- https://doi.org/10.1103/physrev.155.603
Abstract
Self-diffusion in tellurium has been determined directly and unambiguously using a radiotracer in polycrystalline and dislocated single-crystal tellurium samples. The data along the grain boundaries between 280 and 390°C can be represented by /sec, whereas those along the edge (between 253 and 401°C) and screw (between 275 and 380°C) dislocations are described by /sec and /sec, respectively. From these data, in conjunction with the available lattice-diffusivity data in single crystals, it is estimated that the activation energy of the motion of vacancies in tellurium is about 0.7 eV along [0001] and 1 eV along or . The use of Fisher's analysis of Harrison's type-B diffusion kinetics, along with the directly measured data along dislocations and grain boundaries, substantiated the model of grain boundaries as a single-line array of dislocations. But the values of effective grain-boundary thickness and dislocation diameters obtained using the same analysis (1.5× cm) is about two orders of magnitude higher than usually assumed in grain-boundary diffusion studies.
Keywords
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