Abstract
Self-diffusion in tellurium has been determined directly and unambiguously using a Te127m radiotracer in polycrystalline and dislocated single-crystal tellurium samples. The data along the grain boundaries between 280 and 390°C can be represented by DGB=7.47×104 exp[(0.87±0.08 eV)kT] cm2/sec, whereas those along the edge (between 253 and 401°C) and screw (between 275 and 380°C) dislocations are described by DED=9.67×106 exp[(0.65±0.02 eV)kT] cm2/sec and DSD=7.12×103 exp[(0.98±0.10eV)kT] cm2/sec, respectively. From these data, in conjunction with the available lattice-diffusivity data in single crystals, it is estimated that the activation energy of the motion of vacancies in tellurium is about 0.7 eV along [0001] and 1 eV along 101¯0 or 112¯0. The use of Fisher's analysis of Harrison's type-B diffusion kinetics, along with the directly measured data along dislocations and grain boundaries, substantiated the model of grain boundaries as a single-line array of dislocations. But the values of effective grain-boundary thickness and dislocation diameters obtained using the same analysis (1.5×105 cm) is about two orders of magnitude higher than usually assumed in grain-boundary diffusion studies.