Effect of alloying behavior on the electrical characteristics of n-GaAs Schottky diodes metallized with W, Au, and Pt

Abstract

Electrical studies of W/n‐GaAs Schottky diodes have shown that aging at 350 or 500 °C does not significantly change the forward I‐V characteristics of the diodes. Using ⁴He⁺ backscattering analysis, it is shown that the W/GaAs interface of simulated diodes does not exhibit any evidence of interdiffusion or reaction. By contrast, considerable alloying occurs in both Au/GaAs and Pt/GaAs systems. In the former, Ga outdiffuses to the surface of Au and Au diffuses into GaAs upon aging at 250 or 350 °C; this has the effect of decreasing the barrier height φ_B from 0.9 to [inverted lazy s] 0.6 V and increasing the ideality parameter n from 1.0 to [inverted lazy s] 1.2. Interdiffusion in the Pt/GaAs couples, aged at 500 °C, results in the formation of a layered arrangement of type PtGa/PtAs₂/GaAs. The PtAs₂/n‐GaAs interface is associated with a slightly higher φ_B ([inverted lazy s] 0.89 V) than that found for the Pt/n‐GaAs interface (φ_B [inverted lazy s] 0.84 V).