AlGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment
- 1 January 2008
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 44 (4), 320-321
- https://doi.org/10.1049/el:20083428
Abstract
Proposed is a novel AlGaN/GaN field effect diode with relatively thick AlGaN barrier layer, named the Schottky-ohmic combined anode field effect diode (SOCFED) because of its distinguishing anode structure. To obtain a low turn-on voltage, a method of fluoride-based plasma exposure was used. The fabricated SOCFED has a turn-on voltage of 0 V and a breakdown voltage of over 200 V.Keywords
This publication has 3 references indexed in Scilit:
- Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement ModeIEEE Transactions on Electron Devices, 2006
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2001
- Near-ideal platinum-GaN Schottky diodesElectronics Letters, 1996