Properties of high-voltage silicon epitaxial diodes
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9), 3930-3933
- https://doi.org/10.1063/1.1663889
Abstract
Multilayer Si‐epitaxial junctions are described with theoretically limited breakdown voltages as high as 1800 V over moderate areas using a vertical mesa configuration. The diodes were grown by the dichlorosilane method on heavily doped substrates. X‐ray topography shows the misfit dislocations as lying mostly in the interface region between the substrate and the epitaxial layer.Keywords
This publication has 12 references indexed in Scilit:
- Avalanche breakdown voltage of multiple epitaxial pn junctionsSolid-State Electronics, 1973
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Determination of deep centers in silicon by thermally stimulated conductivity measurementsSolid-State Electronics, 1969
- Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron-Doped Silicon SubstratesJournal of Applied Physics, 1969
- A Technique for Trap Determinations in Low-Resistivity SemiconductorsJournal of Applied Physics, 1968
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966
- The projection topograph: a new method in X-ray diffraction microradiographyActa Crystallographica, 1959
- Direct Observation of Individual Dislocations by X-Ray DiffractionJournal of Applied Physics, 1958
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955