p-type conduction in undoped ZnSe

Abstract
p‐type conduction was observed from undoped ZnSe by heat treatment under a selenium atmosphere. Transport measurements are presented. Both shallow (∼ 0.1 eV) and deep (∼ 0.65–0.75 eV) acceptor levels are observed. It is proposed that a zinc vacancy or a zinc vacancy complex is a dominant mechanism in p‐type conduction of ZnSe.