The SINFET—A Schottky injection MOS-gated power transistor
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (12), 1940-1947
- https://doi.org/10.1109/t-ed.1986.22850
Abstract
A new MOS-gated power device, the Schottky injection FET (SINFET), is described in this paper. The device offers 6 times higher current handling capability than conventional n-channel power LDMOS transistors of comparable size and voltage capability and still maintains a comparable switching speed. The low on-resistance is obtained by conductivity modulation of the high-resistivity n- drift region using a Schottky injector. Since only a small number of minority carriers are injected, the speed of the device is not degraded substantially and high latchup resistance is achieved. Breakdown voltages and specific on-resistance observed on typical devices are 170 V and 0.01 Ω . cm 2 , respectively. Gate-turn off times are of the order of 30 ns. Two-dimensional simulation and experimental results comparing the SIN-FET with the LDMOST and lateral insulated gate transistor (LIGT) are presented.Keywords
This publication has 15 references indexed in Scilit:
- Analysis of the lateral insulated gate transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- The SINFET: a new high conductance, high switching speed MOS-gated transistorElectronics Letters, 1985
- Accurate barrier modeling of metal and silicide contactsIEEE Electron Device Letters, 1984
- Comparison of high voltage devices for power integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Lateral resurfed COMFETElectronics Letters, 1984
- Bipolar-mode Schottky contact and applications to high-speed diodesIEEE Transactions on Electron Devices, 1984
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- Improved COMFETs with fast switching speed and high-current capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- High voltage thin layer devices (RESURF devices)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Minority carrier injection and charge storage in epitaxial Schottky barrier diodesSolid-State Electronics, 1965