Lead titanate thin films were prepared by sputter assisted plasma chemical vapor deposition method. Metallic lead as a sputtering target and titanium tetrachloride carried by hydrogen gas were used as lead and titanium sources, respectively. Without post thermal annealing, ferroelectric perovskite phase were obtained at substrate temperature of 550°C on platinum coated glass substrate with the deposition rate of about 70 nm/min. Surface of the film was smoother than the one prepared by post thermal annealing.