Photoemission study of the formation of Schottky barriers
- 1 December 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (11), 617-620
- https://doi.org/10.1063/1.88309
Abstract
For the first time, changes in electronic structure have been studied during Schottky barrier (Cs on GaAs or InP) formation. Strong changes occur near the valence band maximum; however, these do not overcome a dominant role of intrinsic surface states in Fermi‐level pinning.Keywords
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