Control of optoelectronic properties of ZnSe films grown on GaAs by VPE
- 30 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2), 161-166
- https://doi.org/10.1016/0022-0248(82)90318-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductorsJournal of Luminescence, 1980
- Stoichiometry and doping in large gap compound semiconductorsRevue de Physique Appliquée, 1980
- The Defect Structure of Pure and Doped ZnSeJournal of the Electrochemical Society, 1978
- Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975