Temperature dependence of the quantized Hall effect

Abstract

We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of ∼1×${10}^{10}$ ${\mathrm{cm}}^{\mathrm{-}2}$ ${\mathrm{meV}}^{\mathrm{-}1}$ at the middle of the mobility gap. We also found that the correlations between ${\sigma }_{\mathrm{xx}}$ and ${\sigma }_{\mathrm{xy}}$ show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect.