Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy

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Abstract
Excitonic resonances and the quantum confined Stark effect are observed near 1.3μm in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3μm and as a low leakage photodetector.