Chemical Etching of Germanium in Solutions of HF, HNO[sub 3], H[sub 2]O, and HC[sub 2]H[sub 3]O[sub 2]

Abstract

A study has been performed on the acid etching of germanium, and the results have been compared with those of a similar study on the acid etching of silicon. The conclusion is reached that subfluorinated compounds of germanium are formed as intermediates in the diffusion‐limited composition region. It has also been found that passivating films play an important role in the dissolution of germanium. In addition, the tolerance of the system to dilution with is much greater than it is to dilution with .