A novel approach for including band-structure effects in a Monte Carlo simulation of electron transport in silicon

Abstract

We present a novel approach for including the effects of realistic siliconband structure in the simulation of electron transport with a Monte Carlo method. This will be achieved by an electron effective‐mass and energy–over–wave‐vector relation, which are derived directly from the density of states. Consistent with this model, the scattering rates as well as the equations of motion are determined by the density of states. With our approach the computation tables in three‐dimensional momentum space can be replaced by one‐dimensional tables in energy space. The necessary amount of memory size and table lookup time is therefore significantly reduced. The number of free parameters in our model is not higher than in the full band‐structure model. We show by comparison with full band‐structure Monte Carlo and experimental results that there is no loss in physical meaning by the use of the new method.