A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters
- 11 January 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (1), 43-53
- https://doi.org/10.1088/0022-3727/9/1/011
Abstract
The GaAs negative electron affinity photoemission mechanism is studied using the full Bloch wave nature of the incident electron. It is found that the experimentally observed anisotropy between A and B faces is a basic result of the heteropolar nature of the GaAs, contrary to previous interpretations. The physical principles behind the numerical results are illustrated and analysed using a simple method for the scattering which illustrates the origin of the very large anisotropy observed.Keywords
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