Photopumped low threshold Alx″Ga1−x″As -Alx′Ga1−x′As-AlxGa1−xAs (x″∼0.85, x′∼0.3, x=0) single quantum well lasers

Abstract

Data are presented showing that it is possible to photopump and operate a quantum well heterostructure laser at equivalent current densities (J_eq) as low as 70 A/cm². Continuous 300‐K laser operation of a single 60‐Å GaAs (x=0) quantum well in the center of a ∼0.12‐μm‐thick x′∼0.30 Al_x′Ga_1−x′As waveguide (and carrier reservoir), which is confined by x″∼0.85 Al_x″Ga_1−x″As layers, is demonstrated at I_eq∼0.4 mA (168 W/cm², J_eq∼70 A/cm²). These quantum well heterostructures are grown by organometallic vapor phase epitaxy.