1/f; noise model for MOSTs biased in nonohmic region
- 30 April 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (4), 325-329
- https://doi.org/10.1016/0038-1101(80)90199-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Conductance noise investigations on symmetrical planar resistors with finite contactsSolid-State Electronics, 1979
- Lattice scattering causes 1/ƒ noisePhysics Letters A, 1978
- Some general relationships for flicker noise in MOSFETsSolid-State Electronics, 1978
- Characterization of low 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1971
- Experimental study of flicker noise in m.i.s. field-effect transistorsElectronics Letters, 1969