A low temperature process for the reactive formation of Si3N4 layers on InSb
- 1 April 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 67 (2), 321-324
- https://doi.org/10.1016/0040-6090(80)90465-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Alloyed planar diodes in indium antimonideElectronics Letters, 1979
- Electrical properties of Si-N films deposited on silicon from reactive plasmaJournal of Applied Physics, 1978
- Silicon oxide and nitride films deposited by an r.f. glow-dischargeThin Solid Films, 1968
- The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge ReactionJournal of the Electrochemical Society, 1967