Thermodynamic considerations in epitaxial growth of GaAs1−xNx solid solutions
- 26 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (21), 2831-2833
- https://doi.org/10.1063/1.119016
Abstract
We describe epitaxial growth of solid solutions of GaAs1−xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs1−xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions.Keywords
This publication has 11 references indexed in Scilit:
- N incorporation in GaP and band gap bowing of GaNxP1−xApplied Physics Letters, 1996
- Internal strain energy of ternary solid solutions of cubic modificationSemiconductor Science and Technology, 1996
- Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN AlloysPhysical Review Letters, 1996
- Electronic structure and phase stability ofalloysPhysical Review B, 1995
- Quasiparticle excitations in and ordered alloysPhysical Review B, 1995
- Compact metalorganic molecular-beam epitaxy growth systemJournal of Vacuum Science & Technology A, 1994
- Progress and prospects for GaN and the III–V nitride semiconductorsThin Solid Films, 1993
- Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiCJournal of Applied Physics, 1991
- On spinodal decomposition in cubic crystalsActa Metallurgica, 1962
- On spinodal decompositionActa Metallurgica, 1961