Influence of the image force on the band gap in semiconductors and insulators
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9), 4923-4926
- https://doi.org/10.1063/1.328366
Abstract
The change in potential energy of electrons and holes and the resulting band‐gap change caused by the image force have been calculated close to the insulator‐semiconductor interface. Some examples are given from which it appears that in metal‐insulator‐semiconductor (MIS) structures, as in Schottky diodes, the effects of the image force should not be overlooked.Keywords
This publication has 4 references indexed in Scilit:
- The importance of geometry, field, and temperature in tunneling and rectification behavior of point contact junctions of identical metalsApplied Physics Letters, 1979
- Bandgap narrowing in moderately to heavily doped siliconIEEE Transactions on Electron Devices, 1979
- Image force interactions at the interface between an insulator and a semiconductorJournal of Applied Physics, 1974
- Variational Calculation of the Image Potential near a Metal SurfacePhysical Review B, 1972