Crystal Structure of InSe Grown from Melt and Its Structure Transition
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2R), 242-248
- https://doi.org/10.1143/jjap.21.242
Abstract
The crystal structure of InSe grown from the melt in evacuated capsules, was determined by the X-ray single crystal technique. It was ascertained that the rhombohedral structure transforms into the h.c.p. structure under heat-treatment, and that the reverse transition is also possible. Many InSe whiskers were obtained and the crystallographic relation between the two structures in the whiskers is discussed. Some h.c.p. whiskers gave anomalous layer lines in their X-ray rotation patterns, and this is attributed to multiple reflections caused by the fibrous structure of the whiskers. The atomic distances within the coordination units of the InSe structures are revised.Keywords
This publication has 9 references indexed in Scilit:
- The band structures of gallium and indium selenideJournal of Physics C: Solid State Physics, 1977
- The Effect of Structural Change on Electrical Conductivity in InSeJournal of the Electrochemical Society, 1976
- Confirmation of Existence of Phase Transitions in InSe by Specific Heat Measurement and X-Ray AnalysisJournal of the Electrochemical Society, 1974
- The crystallization and decomposition on InSe thin filmsThin Solid Films, 1972
- Crystallisation in vacuum evaporated InSe filmsThin Solid Films, 1972
- Excitonic Instabilities and Bond Theory of III-VI Sandwich SemiconductorsPhysical Review B, 1969
- The indium-selenium systemBritish Journal of Applied Physics, 1958
- SYNTHESIS, CRYSTAL LATTICES AND SOME ELECTRICAL PROPERTIES OF INDIUM TELLURIDES AND SELENIDESMineralogical Journal, 1957
- Kristallchemische Ergebnisse an Phasen aus B-ElementenThe Science of Nature, 1954