Hot-carrier population inversion in
- 15 June 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (12), 6839-6842
- https://doi.org/10.1103/physrevb.23.6839
Abstract
Hall-effect measurements are performed on crystals in up to 3 kV/cm and up to 5 T at 4.2 K employing a new capacitive method for the detection of the Hall field . At high levels, there appear in the vs curves new structures which are interpreted in terms of the population inversion of heavy holes and light holes.
Keywords
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