A two-dimensional model of the avalanche effects in MOS transistors
- 31 March 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (3), 177-183
- https://doi.org/10.1016/0038-1101(82)90105-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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