1.5 to 0.87 [micro sign]m optical upconversion device fabricated by wafer fusion
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (15), 1145-1147
- https://doi.org/10.1049/el:20030732
Abstract
A 1.5 to 0.87 µm wavelength optical upconversion device fabricated by wafer fusion is proposed and demonstrated. The device consists of an In0.53Ga0.47As/InP pin photodetector and a GaAs/AlGaAs light emitting diode, which were grown separately and wafer bonded together. The internal upconversion quantum efficiency is measured to be 18% at room temperature.Keywords
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