Phase-coherence and symmetry in four-terminal magnetotransport measurements on InN nanowires
- 22 June 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 94 (25), 252107
- https://doi.org/10.1063/1.3159626
Abstract
Universal conductance fluctuations in -type doped InN nanowires are investigated at temperatures down to 0.35 K. The nanowires were grown by molecular beam epitaxy. The effect of the contact resistance is eliminated by performing the measurements in a four-terminal configuration. We find that the decrease in the conductance fluctuation amplitude with temperature is due to small energy transfer phase-breaking processes and thermal broadening. In contrast to measurements in a two-terminal configuration, the symmetry of the conductance under magnetic field reversal is lost.
Keywords
This publication has 15 references indexed in Scilit:
- Flux Quantization Effects in InN NanowiresNano Letters, 2008
- Phase-coherent transport in InN nanowires of various sizesPhysical Review B, 2008
- Top-gate defined double quantum dots in InAs nanowiresApplied Physics Letters, 2006
- Semiconductor nanowiresJournal of Physics D: Applied Physics, 2006
- Nanowire-based one-dimensional electronicsMaterials Today, 2006
- Photoluminescence and Intrinsic Properties of MBE-Grown InN NanowiresNano Letters, 2006
- Single-electron tunneling in InP nanowiresApplied Physics Letters, 2003
- Flux-cancellation effect on narrow-channel magnetoresistance fluctuationsPhysical Review B, 1988
- Universal conductance fluctuations in metals: Effects of finite temperature, interactions, and magnetic fieldPhysical Review B, 1987
- Effects of electron-electron collisions with small energy transfers on quantum localisationJournal of Physics C: Solid State Physics, 1982