Applications of the scanning electron microscope EBIC mode to semiconductor device evaluation and failure analysis
- 29 February 1980
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 11 (1), 19-25
- https://doi.org/10.1016/s0026-2692(80)80209-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Interpretation of scanning electron microscope measurements of minority carrier diffusion lengths in semiconductorsInternational Journal of Electronics, 1978
- Observation of dislocations in a silicon phototransistor by scanning electron microscopy using the barrier electron voltaic effectSolid-State Electronics, 1976
- Observation of surface phenomena on semiconductor devices by a light spot scanning methodSolid-State Electronics, 1967
- Quantitative photovoltaic evaluation of the resistivity homogeneity of germanium single crystalsSolid-State Electronics, 1960