Ion Implantation in Compound Semiconductor Research
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (2), 1741-1746
- https://doi.org/10.1109/tns.1981.4331511
Abstract
Ion implantation is widely used in the fabrication of III-V compound semiconductor devices for microwave and optoelectronic applications and in high-speed integrated circuits. Other applications employ implantation as a tool for basic semiconductor research. This paper provides an overview of these applications, along with problems in the implantation and annealing of compounds and recent solutions to these problems.Keywords
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