Resistance switching of copper doped MoOx films for nonvolatile memory applications

Abstract

Nonvolatile and reversible resistance switching of copperdoped Mo O x film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 10 6 cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25 h at 85 ° C . The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into Mo O x film from the bottom electrode.