Diffusion Layers Formed in Si Substrates during the Epitaxial Growth of BP and Application to Devices

Abstract

Either n‐type (phosphorus) or p‐type (boron) diffused layers are formed on Si substrates during the epitaxial growth of n‐ or p‐type boron monophosphide (BP) on Si substrates by using a system. At an early growth stage of BP on Si substrates a very small amount of boron and phosphorus covers the substrate surface, which will be a diffusion source. The properties of the diffused layers thus formed are dependent on substrate temperatures and reactant gas flow rates. BP layers then grown on the substrate do not act as a diffusion source. So we can realize many types of BP‐Si heterojunctions. Of these combinations, a wide gap window solar cell and a wide gap emitter transistor are fabricated and their characteristics are investigated.