High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
- 1 January 2011
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 50 (1S1), 01AD03
- https://doi.org/10.1143/jjap.50.01ad03
Abstract
We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation.Keywords
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