On the effect of mobility variation on MOS device characteristics

1 January 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (2), 217-218
https://doi.org/10.1109/PROC.1968.6239

Abstract

An empirical approximation is used to predict the effect of surface-field dependent mobility on MOS device characteristics. Mobility dependence on both gate and drain voltages is considered. The approximation is verified by comparison with experimental device characteristics.

Keywords

MOS DEVICES
DELAY LINES
VOLTAGE
ATTENUATION
SURFACE TREATMENT
ACOUSTIC WAVES
ELECTRONS
PULSE AMPLIFIERS
INSERTION LOSS
MOSFETS

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