Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 μm

1 January 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (6), 355-357
https://doi.org/10.1049/el:19900231

Abstract

Strain is used to tailor the absorption edge of thick (100 Å) quantum wells. This allows efficient modulation at 1.55 μm. An extinction ratio of 18 dB has been achieved by applying a reverse bias of 6 V to a 160 μm long waveguide device.

Keywords

III-V SEMICONDUCTORS
QUANTUM-CONFINED STARK EFFECT
OPTICAL WAVEGUIDE MODULATION
160 MICRON
1.55 MICRON
INGAAS-INALAS STRAINED LAYER MULTIPLE QUANTUM WELLS
ABSORPTION EDGE
6 V
REVERSE BIAS
WAVEGUIDE DEVICE
EXTINCTION RATIO

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