Substitution reaction of surface adsorbed P atoms to as atoms in the GaP/GaAs atomic layer epitaxy
- 1 January 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 183 (1-2), 75-80
- https://doi.org/10.1016/s0022-0248(97)00387-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxyApplied Surface Science, 1994
- OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wellsJournal of Crystal Growth, 1991
- Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilizationJournal of Vacuum Science & Technology B, 1990
- Epitaxial regrowth of an InAs surface on InP: An example of artificial surfacesPhysical Review B, 1986