Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Ballistic electron motion in GaAs at room temperature
Home
Publications
Ballistic electron motion in GaAs at room temperature
Ballistic electron motion in GaAs at room temperature
LE
L.F. Eastman
L.F. Eastman
RS
R. Stall
R. Stall
DW
D. Woodard
D. Woodard
ND
N. Dandekar
N. Dandekar
CW
C.E.C. Wood
C.E.C. Wood
MS
M.S. Shur
M.S. Shur
KB
K. Board
K. Board
Publisher Website
Google Scholar
Add to library
Cite
Download
Share
Download
1 January 1980
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 16
(13)
,
524-525
https://doi.org/10.1049/el:19800366
Abstract
Experimental current/voltage characteristics are described for n+-n-n+ and n+-p−-n+ GaAs structures. It is evident from the results that the electron transport is mainly ballistic in nature.
Keywords
BALLISTIC ELECTRON MOTION
GAAS
CURRENT VOLTAGE CHARACTERISTICS
N+-P--N+ GAAS STRUCTURES
N+-N-N+ GAAS STRUCTURE
ELECTRON TRANSPORT
All Articles
Open Access
Cited by 45 articles