Photoelasticity of the cuprous halides
- 15 October 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (8), 3578-3582
- https://doi.org/10.1103/physrevb.14.3578
Abstract
We present our acousto-optic measurements of the photoelastic tensor of the cuprous halides, CuCl, CuBr, and CuI. The data include the magnitudes and signs of the coefficients and their optical wavelength dependence. Several distinct trends are observed as a function of ionicity both within the halides and in the isoelectronic and isostructural sequence Ge, GaAs, ZnSe, CuBr. Particularly interesting results are found for the infinite-wavelength limits. We find that is very nearly the same in all the materials considered, whereas grows monotonically on going from Ge to CuBr; is approximately equal to in the halides, indicating isotropy of the direct photoelastic tensor. The hydrostatic coefficient goes monotonically from a large negative value in Ge to a positive value in the halides—the only known tetrahedrally coordinated binary semiconductors to have positive coefficients. We believe this implies that the deformation potential of the average optical gap is nearly zero.
Keywords
This publication has 15 references indexed in Scilit:
- Stress-optic coefficients of ZnSeApplied Optics, 1975
- Universal valence bands for rocksalt-type compounds and their connection with those of tetrahedral crystalsPhysical Review B, 1975
- Density of valence states of CuCl, CuBr, CuI, and AgIPhysical Review B, 1974
- Photoelastic Tensor of Silicon and the Volume Dependence of the Average GapPhysical Review Letters, 1974
- An ultrasonic technique for measuring the absolute signs of photoelastic coefficients and its application to fused silica and cadmium molybdateApplied Physics Letters, 1973
- Photoelastic properties of cuprous halidesOptics Communications, 1971
- Covalent-Ionic and Covalent-Metallic Transitions of Tetrahedrally CoordinatedCrystals Under PressurePhysical Review Letters, 1971
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Photoelastic Properties of Selected Materials and Their Relevance for Applications to Acoustic Light Modulators and ScannersJournal of Applied Physics, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966