Hall Effect Measurement of Radiation Damage and Annealing in Si
- 1 February 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (2), 167-174
- https://doi.org/10.1143/jpsj.19.167
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961