The effects of ion implantation on La, Ga:YIG films as observed by spin wave resonance
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7), 3821-3826
- https://doi.org/10.1063/1.328122
Abstract
A ferromagnetic resonance (FMR) study of the effects of ion implantation into La, Ga:YIG (yttrium iron garnet) films is presented. H+, Ne+, and Ar+ are used with doses ranging from 1014 to 1016 ions/cm2 and implantation energies up to 200 keV. It is observed that the field for uniform resonance changes, and also that the magnetic film thickness decreases, depending on the ion and dose used. The experimental spin‐wave spectra are compared with theoretical spectra, yielding a profile for the anisotropy through the film thickness. It is argued that the observed changes in the magnetic film thickness are due to the existence of paramagnetism in the implanted top layer of the film.Keywords
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