Simulation of Diffraction Intensity Distribution of a Superconductor Containing Stacking Faults in the Bi-Sr-Ca-Cu-O System

Abstract

A superconducting material with a T _c∼110 K in the Bi-Sr-Ca-Cu-O system is liable to contain stacking faults as suggested by the broadened diffraction. The diffraction intensity is simulated by applying the matrix method based on assumed models of stacking faults. The calculated intensity distributions explain the features of the observed powder X-ray diffraction patterns of the high-T _c specimens.