Surface modification of a-Si:H with a scanning tunneling microscope operated in air

Abstract

A scanning tunneling microscope was applied to the lithographic microprocessing of amorphous materials in air. Phase transformations were induced in the thin‐film a‐Si:H on silicon by low‐energy electron irradiation. Electronic characterization of the surface before and after the phase transformation indicated a change in the local conductivity directly below the tip. Submicrometer lines were formed on these thin films by application of multiple, 10‐V, 35‐μs voltage pulses between the tip and the sample. The lines were imaged with the STM in the imaging mode. The linewidths written on a‐Si:H corresponded to the average tip radii used in the experiments, e.g., approximately 500–5000 Å.