Double-layer resist films for submicrometer electron-beam lithography

1 August 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (8), 1443-1448
https://doi.org/10.1109/t-ed.1980.20054

Abstract

This paper describes a double-layer resist-film technique for submicrometer electron-beam lithography. The results of computer simulation and lithography experiments carried out on PMMA/MPR (LO/HI) and MPR/PMMA (HI/LO) double-layer films are reported in full detail. It is shown that an undercut profile suitable for the lift-off processing can be reproducibly obtained by the use of the LO/HI structure over a wide range of electron-beam exposure dose, while the HI/LO structure is of great advantage in the fabrication of lift-off metal gates with a mushroom-like cross section.

Keywords

COMPUTATIONAL MODELING
COMPUTER SIMULATION
GALLIUM ARSENIDE
RESISTS
DOUBLE LAYER
VERY LARGE SCALE INTEGRATION
ELECTRON BEAM LITHOGRAPHY
FABRICATION
LITHOGRAPHY
SILICON

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