AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
- 6 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (1), 36-37
- https://doi.org/10.1063/1.96753
Abstract
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.Keywords
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