LEED, AES and work function measurements on clean and cesium covered polar faces of GaP
- 31 January 1975
- journal article
- Published by Elsevier in Surface Science
- Vol. 47 (1), 162-166
- https://doi.org/10.1016/0039-6028(75)90281-2
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and OSurface Science, 1975
- Electron spectroscopy of GaAs and AlAs surfacesSurface Science, 1975
- Symétries de translation et de rotation des diagrammes de diffraction d'électrons lents des faces polaires {111} de GaPSurface Science, 1973
- A study of InAs(111) and (1̄1̄1̄) surfaces using LEED and Auger electron spectroscopySurface Science, 1971
- LEED, Auger, and work function studies of clean and Na-covered surfaces of GaAsSurface Science, 1971
- Combined Low-Energy Electron Diffraction and Auger Electron Spectroscopy Studies of Si, Ge, GaAs, and InSb SurfacesJournal of Vacuum Science and Technology, 1971
- Photoelectric Emission and Interband Transitions of GaPPhysical Review B, 1966
- Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSbSurface Science, 1966
- Aluminosilicate Alkali Ion SourcesReview of Scientific Instruments, 1966
- The Contact Difference of Potential Between Tungsten and Barium. The External Work Function of BariumPhysical Review B, 1935