Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (3), 62-64
- https://doi.org/10.1109/68.87897
Abstract
The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark-effect quantum-well optical modulator, and a metal-semiconductor field-effect transistor (MESFET) to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. To provide an illustration of feasibility, the authors demonstrate signal amplification with a single MESFET.Keywords
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