Tantalum anodic oxidation I. Evidence for surface heterogeneity and roughness
- 1 May 1975
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 27 (1), 1-15
- https://doi.org/10.1016/0040-6090(75)90002-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Localized adsorption on heterogeneous surfacesThin Solid Films, 1974
- Surface ionization and its applicationsProgress in Surface Science, 1972
- A Very Precise Sectioning Method for Measuring Concentration Profiles in Anodic Tantalum OxideJournal of the Electrochemical Society, 1972
- Electron emission from heterogeneous metal surfacesPhysica Status Solidi (a), 1971
- Investigation of Tantalum Film Properties by LayersJournal of Vacuum Science and Technology, 1971
- An O18 Study of the Source of Oxygen in the Anodic Oxidation of Silicon and Tantalum in Some Organic SolventsJournal of the Electrochemical Society, 1971
- Mécanismes de “germination-croissance” de couches minces synthétisées par condensation de plasmas froids (pulvérisation diode). II. Schéma réactionnelThin Solid Films, 1970
- Anodization of Tantalum Over the Temperature Range 0° to 250°CJournal of the Electrochemical Society, 1970
- The Measurement of Ionic Mobilities in the Anodic Oxides of Tantalum and Zirconium by a Precision Sectioning TechniqueJournal of the Electrochemical Society, 1968
- Electron beam scanning technique for measuring surface work function variationsSurface Science, 1966