Temperature Dependence of Molecular Beam Epitaxial Growth Rates for InxGa1-xAs and InxAl1-xAs
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9R), 1441
- https://doi.org/10.1143/jjap.25.1441
Abstract
The temperature dependence of the growth and evaporation rates in GaAs, In x Ga1-x As and In x Al1-x As grown by molecular-beam epitaxy (MBE) was measured by reflection high-energy electron-diffraction (RHEED) oscillations. The growth rate and the evaporation rate of GaAs were fitted using a thermodynamical approach. For ternary alloys the calculated results were in agreement with the observed growth rates.Keywords
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