An insulated-gate charge transfer device on InP
- 15 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6), 552-553
- https://doi.org/10.1063/1.91983
Abstract
A three‐phase, single‐cell insulated‐gate charge‐coupled device on p‐type InP is reported which demonstrates the potential of this material for charge transfer applications. Charge transfer efficiencies ≳99.5% have been observed for devices operating at clock rates up to 50 MHz.Keywords
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