Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique
- 12 August 2015
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in CrystEngComm
- Vol. 17 (39), 7496-7499
- https://doi.org/10.1039/c5ce01159k
Abstract
Epitaxial growth of AlN films on c-sapphire using a multilayer structure has been investigated by metal–organic chemical vapor deposition adopting multiple alternation cycles of low- and high-temperature (LT–HT) growth. It is found that the surface morphology and crystal quality can be greatly improved using three alternation cycles with X-ray diffraction ω-scan full width at half maximum values of 311 and 548 arcsec for the (0002) and (10−12) peaks, respectively, which are induced by the alternation of the three-dimensional (3D) and two-dimensional (2D) growth modes caused by the LT–HT process. The first 3D–2D cycle is found to play a major role in threading dislocation reduction, while the second and third cycles mainly account for tensile stress relaxation.Keywords
Funding Information
- National Natural Science Foundation of China (11174008, 61361166007, 61474002)
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