Line-shape extraction analysis of silicon oxide layers on silicon by channelling effect measurements
- 1 December 1973
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 19 (2), 329-337
- https://doi.org/10.1016/0040-6090(73)90069-2
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- The electrical properties of anodically grown silicon dioxide filmsSolid-State Electronics, 1973
- Silicon surface studies by means of proton backscattering and proton induced X-Ray emissionRadiation Effects, 1973
- Studies of solid surfaces with 100 keV 4He+ and H+ ion beamsSurface Science, 1972
- Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in siliconThin Solid Films, 1971
- Channeling-Effect Analysis of Thin Films on Silicon: Aluminum OxideJournal of Applied Physics, 1971
- Technique used in Hall effect analysis of ion implanted Si and GeSolid-State Electronics, 1970
- A refined oxidation-stripping technique of thin n-type Si filmsRadiation Effects, 1969
- Radiotracer Studies of Ion Implanted Profile Build-Up in Silicon SubstratesJournal of the Electrochemical Society, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Anodic Formation of Oxide Films on SiliconJournal of the Electrochemical Society, 1957