Structure and Raman Scattering of AmorphousGe0.5Si0.5

Abstract

The diffracted x-ray intensity and Raman scattering of amorphous ${\mathrm{Ge}}_{0.5}$ ${\mathrm{Si}}_{0.5}$ prepared by sputtering has been measured. The x-ray data indicate that the structure is most likely a random mixing of Ge and Si atoms in a continuous random network structure similar to that proposed for amorphous Ge and Si. The reduced Raman intensity indicates vibrational features that can be associated with Ge-Ge, Ge-Si, and Si-Si bonds. The high-frequency Si-Si-like vibrations are more severely influenced by the compositional disorder than the low-frequency Ge-Ge-like modes.